Invention Grant
- Patent Title: Semiconductor device having protection film with recess
-
Application No.: US15601180Application Date: 2017-05-22
-
Publication No.: US09947752B2Publication Date: 2018-04-17
- Inventor: Akitaka Soeno
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- Priority: JP2016-143263 20160721
- Main IPC: H01L29/41
- IPC: H01L29/41

Abstract:
A semiconductor device may include a semiconductor substrate, a first metal film covering a surface of the semiconductor substrate; a protection film covering a peripheral portion of a surface of the first metal film; and a second metal film covering a range extending across a center portion of the surface of the first metal film and a surface of the protection film, wherein a recess may be provided in the surface of the protection film, and a part of the second metal film may be in contact with an inner surface of the recess.
Public/Granted literature
- US20180026109A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-01-25
Information query
IPC分类: