Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US14842680Application Date: 2015-09-01
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Publication No.: US09947753B2Publication Date: 2018-04-17
- Inventor: Chi-Cheng Hung , Kei-Wei Chen , Yu-Sheng Wang , Ming-Ching Chung , Chia-Yang Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L21/768 ; H01L29/08 ; H01L29/165 ; H01L21/285 ; H01L23/485 ; H01L29/49

Abstract:
A semiconductor structure includes a semiconductor substrate, at least one dielectric layer, a dielectric spacer liner (DSL) layer, and at least one conductor. The dielectric layer is present on the semiconductor substrate. The dielectric layer has at least one contact hole exposing at least a portion of the semiconductor substrate. The semiconductor substrate has at least one recess communicating with the contact hole. The recess has a bottom surface and at least one sidewall. The DSL layer is present on at least the sidewall of the recess. The conductor is present at least partially in the contact hole and is electrically connected to the semiconductor substrate.
Public/Granted literature
- US20160336412A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-11-17
Information query
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