Invention Grant
- Patent Title: FinFET with reduced capacitance
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Application No.: US15076711Application Date: 2016-03-22
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Publication No.: US09947763B2Publication Date: 2018-04-17
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Ali Khakifirooz , Charles W. Koburger, III
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L21/84 ; H01L27/088 ; H01L27/12 ; H01L29/08

Abstract:
A method including depositing a gap fill material on top of a conformal dummy gate oxide above and in between a plurality of fins, forming one or more openings between the plurality of fins and the gap fill material by selectively removing a portion of the conformal dummy gate oxide, and forming a gate within the one or more openings, and above the plurality of fins and the gap fill material.
Public/Granted literature
- US20160204225A1 FINFET WITH REDUCED CAPACITANCE Public/Granted day:2016-07-14
Information query
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