Invention Grant
- Patent Title: Amorphous oxide and thin film transistor
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Application No.: US13097572Application Date: 2011-04-29
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Publication No.: US09947803B2Publication Date: 2018-04-17
- Inventor: Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
- Applicant: Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
- Applicant Address: JP Saitama JP Tokyo JP Tokyo
- Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY,CANON KABUSHIKI KAISHA,TOKYO INSTITUTE OF TECH
- Current Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY,CANON KABUSHIKI KAISHA,TOKYO INSTITUTE OF TECH
- Current Assignee Address: JP Saitama JP Tokyo JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2004-071477 20040312; JP2004-325938 20041110
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/786 ; C23C14/00 ; C23C14/08 ; C23C14/28 ; C23C14/34 ; H01L21/02 ; H01L27/12
Abstract:
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
Public/Granted literature
- US20110201162A1 AMORPHOUS OXIDE AND THIN FILM TRANSISTOR Public/Granted day:2011-08-18
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