Invention Grant
- Patent Title: Method of fabricating light emitting diode and light emitting diode manufactured thereby
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Application No.: US15000780Application Date: 2016-01-19
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Publication No.: US09947845B2Publication Date: 2018-04-17
- Inventor: Seong-Ju Park , Young-Chul Leem
- Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Gwangju
- Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Gwangju
- Agency: Hauptman Ham, LLP
- Priority: KR10-2015-0008536 20150119
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/58 ; H01L33/40 ; H01L33/00 ; H01L33/38

Abstract:
Disclosed are a method of fabricating a light emitting diode and a light emitting diode fabricated by the same. In the method of fabricating a light emitting diode, a convex-concave pattern is formed on a light emitting structure and a nanosphere layer is transferred to the convex-concave pattern, followed by dry etching to form a stepped surface structure having a plurality of nanobumps arranged on a surface thereof, and chemical coating to reduce surface energy of the stepped surface structure. The method can easily form a stepped surface structure having a plurality of nanobumps on a surface of a convex-concave pattern periodically arranged through nanosphere lithography and dry etching, thereby simplifying the fabrication process while improving production yield.
Public/Granted literature
- US20160211413A1 METHOD OF FABRICATING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY Public/Granted day:2016-07-21
Information query
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