Invention Grant
- Patent Title: Electronic device and method for fabricating the same
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Application No.: US14559546Application Date: 2014-12-03
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Publication No.: US09947859B2Publication Date: 2018-04-17
- Inventor: Cha-Deok Dong , Daisuke Watanabe , Kazuya Sawada , Young-Min Eeh , Koji Ueda , Toshihiko Nagase
- Applicant: SK hynix Inc. , TOSHIBA MEMORY CORPORATION
- Applicant Address: KR Gyeonggi-do JP Tokyo
- Assignee: SK Hynix Inc.,TOSHIBA MEMORY CORPORATION
- Current Assignee: SK Hynix Inc.,TOSHIBA MEMORY CORPORATION
- Current Assignee Address: KR Gyeonggi-do JP Tokyo
- Agency: IP & T Group LLP
- Priority: KR10-2014-0025444 20140304
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/02 ; H01L43/12 ; H01L43/08 ; G11C11/16 ; H01L27/22

Abstract:
An electronic device that includes a first structure including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer which is interposed between the first magnetic layer and the second magnetic layer; and a second structure disposed over the first structure, and including a magnetic correction layer for correcting a magnetic field of the first structure, wherein a width of a bottom surface of the second structure is larger than a width of a top surface of the first structure.
Public/Granted literature
- US20150255708A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-09-10
Information query