Invention Grant
- Patent Title: Air gap in BAW top metal stack for reduced resistive and acoustic loss
-
Application No.: US15059789Application Date: 2016-03-03
-
Publication No.: US09948272B2Publication Date: 2018-04-17
- Inventor: Paul Stokes , Gernot Fattinger
- Applicant: TriQuint Semiconductor, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H03H9/02 ; H03H9/13 ; H03H9/17

Abstract:
Embodiments of a Bulk Acoustic Wave (BAW) device including a high conductivity electrode are disclosed. In some embodiments, a BAW device includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second electrode on a second surface of the piezoelectric layer opposite the first electrode. The second electrode includes a first metal layer and a second metal layer. The second metal layer is on the second surface of the piezoelectric layer, and the first metal layer is over a surface of the second metal layer opposite the piezoelectric layer, where the first metal layer is separated from the second metal layer by an air gap. By including the air gap, the thickness of the first metal layer (e.g., a high conductivity layer) can be increased to thereby increase the electrical conductivity of the second electrode while maintaining the performance of the BAW device.
Public/Granted literature
- US20170077385A1 AIR GAP IN BAW TOP METAL STACK FOR REDUCED RESISTIVE AND ACOUSTIC LOSS Public/Granted day:2017-03-16
Information query
IPC分类: