Invention Grant
- Patent Title: MEMS structure with improved shielding and method
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Application No.: US14930642Application Date: 2015-11-02
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Publication No.: US09950921B2Publication Date: 2018-04-24
- Inventor: Te-Hsi “Terrence” Lee , Sudheer S. Sridharamurthy , Shingo Yoneoka , Wenhua Zhang
- Applicant: mCube Inc.
- Applicant Address: US CA San Jose
- Assignee: mCube Inc.
- Current Assignee: mCube Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; B81B3/00

Abstract:
An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.
Public/Granted literature
- US20160052777A1 MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD Public/Granted day:2016-02-25
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