Invention Grant
- Patent Title: Sputtering target and/or coil, and process for producing same
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Application No.: US13809189Application Date: 2011-07-27
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Publication No.: US09951412B2Publication Date: 2018-04-24
- Inventor: Kenichi Nagata , Nobuhito Makino
- Applicant: Kenichi Nagata , Nobuhito Makino
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2010-172408 20100730
- International Application: PCT/JP2011/067061 WO 20110727
- International Announcement: WO2012/014921 WO 20120202
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/34 ; C21D1/74 ; C21D3/06 ; C22C14/00 ; C22F1/00 ; C22F1/18 ; C22C27/02 ; H01J37/34

Abstract:
Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.
Public/Granted literature
- US20130112556A1 SPUTTERING TARGET AND/OR COIL, AND PROCESS FOR PRODUCING SAME Public/Granted day:2013-05-09
Information query
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