Invention Grant
- Patent Title: Methods for producing low oxygen silicon ingots
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Application No.: US14893280Application Date: 2014-05-22
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Publication No.: US09951440B2Publication Date: 2018-04-24
- Inventor: Soubir Basak , Carissima Marie Hudson , Gaurab Samanta , Jae-Woo Ryu , Hariprasad Sreedharamurthy , Kirk D. McCallum , HyungMin Lee
- Applicant: SunEdison Semiconductor Limited
- Applicant Address: US MO St. Peters
- Assignee: SunEdison Semiconductor Limited
- Current Assignee: SunEdison Semiconductor Limited
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdael LLP
- International Application: PCT/US2014/039164 WO 20140522
- International Announcement: WO2014/190165 WO 20141127
- Main IPC: B32B3/02
- IPC: B32B3/02 ; C30B15/20 ; C30B15/30 ; C30B29/06 ; C30B15/04 ; C30B30/04 ; H01L29/165 ; H01L29/167 ; H01L29/739

Abstract:
An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.
Public/Granted literature
- US20160108551A1 METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS Public/Granted day:2016-04-21
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