Invention Grant
- Patent Title: Method for repairing a mask
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Application No.: US15076366Application Date: 2016-03-21
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Publication No.: US09952503B2Publication Date: 2018-04-24
- Inventor: Yen-Kai Huang , Yuan-Chih Chu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/72
- IPC: G03F1/72 ; G03F1/22

Abstract:
A method for repairing a mask includes receiving a mask having first and second defective regions. A first treatment is performed to the mask. After performing the first treatment, a first repair process is performed on the mask. The first defective region is repaired to form a first repaired defective region. A second treatment is performed to the mask, including the first repaired defective region. After performing the second treatment, a second repair process is performed on the mask. The second defective region is repaired to form a second repaired defective region.
Public/Granted literature
- US20160202605A1 METHOD FOR REPAIRING A MASK Public/Granted day:2016-07-14
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