A volatile resistive memory device includes a resistive memory element including a barrier material portion and a charge-modulated resistive memory material portion. The barrier material portion includes a material selected from germanium and a silicon-germanium alloy, and the charge-modulated resistive memory material portion includes a non-filamentary, electrically conductive metal oxide. The resistive memory device may be a volatile eDRAM device. In operation, reading a resistance state of the resistive memory element does not disturb the resistance state of the charge-modulated resistive memory material portion.