Methods of operating a memory include applying a first voltage level to a first semiconductor material of a first conductivity type forming a channel region for a memory cell of a string of series-connected memory cells, wherein the first semiconductor material is electrically connected to a second semiconductor material of the first conductivity type through a first conductive material of a second conductivity type different than the first conductivity type, and wherein the second semiconductor material forms a channel region for a different memory cell of the string of series-connected memory cells; and applying a second voltage level, less than the first voltage level, to a control gate of the memory cell and applying a third voltage level, less than the second voltage level, to a control gate of the different memory cell while applying the first voltage level to the first semiconductor material.