Invention Grant
- Patent Title: Semiconductor mask blanks with a compatible stop layer
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Application No.: US14856670Application Date: 2015-09-17
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Publication No.: US09953833B2Publication Date: 2018-04-24
- Inventor: Chih-Chiang Tu , Chun-Lang Chen , Boming Hsu , Tran-Hui Shen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; G03F1/46 ; G03F1/26 ; H01L21/31 ; H01L21/311 ; H01L21/66

Abstract:
Provided is a method for creating a mask blank that includes a capping layer and a shifter layer. The capping layer is optically compatible and process compatible with the shifter layer. The method may include providing a cleaned and polished mask substrate to a deposition tool and depositing, within the deposition tool, a shifter layer over a cleaned and polished mask substrate. The shifter layer may include each material of a set of materials in a first proportion. The method may also include depositing an additional layer over the shifter layer, the additional layer providing a capping layer over the shifter layer. The capping layer includes the materials in a second proportion unequal to the first proportion. The capping layer includes molybdenum, silicon, and nitride in a proportion that aids in detection by a residual gas analyzer. Also provided is also a mask blank structure incorporating the compatible capping layer.
Public/Granted literature
- US20160013058A1 Semiconductor Mask Blanks with a Compatible Stop Layer Public/Granted day:2016-01-14
Information query
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