Invention Grant
- Patent Title: Transistor having a gate comprising a titanium nitride layer and method for depositing this layer
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Application No.: US14669183Application Date: 2015-03-26
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Publication No.: US09953837B2Publication Date: 2018-04-24
- Inventor: Pierre Caubet , Sylvain Baudot
- Applicant: STMICROELECTRONICS (CROLLES 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee: STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group LLP
- Priority: FR1155917 20110630
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/49 ; H01L21/285
Abstract:
A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.
Public/Granted literature
- US20150200099A1 TRANSISTOR HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND METHOD FOR DEPOSITING THIS LAYER Public/Granted day:2015-07-16
Information query
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