Invention Grant
- Patent Title: 3D semiconductor device and system
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Application No.: US15488514Application Date: 2017-04-16
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Publication No.: US09953870B2Publication Date: 2018-04-24
- Inventor: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Zeev Wurman
- Applicant: Monolithic 3D Inc.
- Applicant Address: US CA San Jose
- Assignee: MONOLITHIC 3D INC.
- Current Assignee: MONOLITHIC 3D INC.
- Current Assignee Address: US CA San Jose
- Agency: Tran & Associates
- Main IPC: H01L21/77
- IPC: H01L21/77 ; H01L29/66 ; H01L27/10 ; H01L23/40 ; H01L23/00 ; H01L23/31 ; H01L27/02 ; B82Y10/00 ; H01L21/84 ; H01L23/528 ; H01L21/683 ; H01L21/762 ; H01L27/06 ; H01L29/78 ; H01L27/092 ; H01L27/105 ; H01L27/108 ; H01L29/786 ; H01L29/788 ; H01L29/792 ; H01L27/11 ; H01L27/11524 ; H01L27/11526 ; H01L27/11529 ; H01L27/11551 ; H01L27/1157 ; H01L27/11573 ; H01L27/11578 ; H01L27/118 ; H01L27/12 ; H01L29/10 ; G11C16/04 ; H01L23/36 ; H01L23/367 ; H01L27/088

Abstract:
A 3D integrated circuit device, including: a first transistor; a second transistor; and a third transistor, where the third transistor is overlaying the second transistor and the third transistor is controlled by a third control line, where the second transistor is overlaying the first transistor and the second transistor is controlled by a second control line, where the first transistor is part of a control circuit controlling the second control line and the third control line, and where the second transistor and the third transistor are self-aligned.
Public/Granted literature
- US20170221761A1 3D SEMICONDUCTOR DEVICE AND SYSTEM Public/Granted day:2017-08-03
Information query
IPC分类: