Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US15016079Application Date: 2016-02-04
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Publication No.: US09953878B2Publication Date: 2018-04-24
- Inventor: Yu-Lien Huang , Tung Ying Lee , Pei-Yi Lin , Chun-Hsiang Fan , Sheng-Wen Yu , Neng-Kuo Chen , Ming-Huan Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/8234 ; H01L21/762 ; H01L21/3105 ; H01L21/324 ; H01L27/088 ; H01L29/40
Abstract:
A method of forming a semiconductor device is provided. The method includes forming a recess in a substrate and forming a first dielectric layer in the recess. A portion of the first dielectric layer is removed. A second dielectric layer is formed over the first dielectric layer. A gate structure is formed over the second dielectric layer.
Public/Granted literature
- US20160155671A1 Method of Forming a Semiconductor Device Public/Granted day:2016-06-02
Information query
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