Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14640123Application Date: 2015-03-06
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Publication No.: US09953890B2Publication Date: 2018-04-24
- Inventor: Hideaki Takahashi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2012-246805 20121109
- Main IPC: H01L23/047
- IPC: H01L23/047 ; H01L23/498 ; H01L23/043 ; H01L25/07 ; H01L23/373

Abstract:
A semiconductor device includes an insulating substrate on which semiconductor elements are mounted and a surrounding case in which the insulating substrate is housed. Two terminal conductors, both ends of each of which are fixed in sidewalls of the surrounding case, are provided between the sidewalls, and connection terminals protruding toward the insulating substrate side are provided on the respective terminal conductors. The connection terminals and a conductive foil on the insulating substrate are soldered together. Insulating blocks for keeping the distance between the adjacent terminal conductors at a fixed distance or greater are provided in the vicinity of the central portion of the terminal conductor. The insulating blocks suppress the terminal conductor being deformed by being thermally expanded when soldering. Because of this, it is possible to stabilize solderability, and it is possible to prevent an occurrence of defective connection.
Public/Granted literature
- US20150187668A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-02
Information query
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