Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15446978Application Date: 2017-03-01
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Publication No.: US09953894B2Publication Date: 2018-04-24
- Inventor: Shingo Masuko , Yoshiharu Takada , Kazuo Fujimura
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2016-181793 20160916
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L23/367 ; H01L29/08 ; H01L29/417 ; H01L21/48 ; H01L23/373 ; H01L23/544 ; H01L21/78 ; H01L21/304 ; H01L21/02 ; H01L21/311
Abstract:
A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.
Public/Granted literature
- US20180082918A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-03-22
Information query
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