Invention Grant
- Patent Title: Diode connected vertical transistor
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Application No.: US15459574Application Date: 2017-03-15
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Publication No.: US09953973B1Publication Date: 2018-04-24
- Inventor: Karthik Balakrishnan , Pouya Hashemi , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L29/66 ; H01L29/78 ; H01L29/739 ; H01L29/861

Abstract:
An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region.
Information query
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