Invention Grant
- Patent Title: Antifuse array and method of forming antifuse using anodic oxidation
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Application No.: US14527885Application Date: 2014-10-30
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Publication No.: US09953989B2Publication Date: 2018-04-24
- Inventor: Jenn-Gwo Hwu , Wei-Cheng Tian , Samuel C. Pan , Chao-Hsiung Wang , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company Limited , National Taiwan University
- Applicant Address: TW Taiwan
- Assignee: Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University
- Current Assignee Address: TW Taiwan
- Agency: Jones Day
- Main IPC: H01L27/112
- IPC: H01L27/112 ; C25D11/02 ; H01L21/02 ; H01L21/768 ; B82Y40/00 ; H01L29/423 ; B82Y10/00 ; H01L29/06 ; H01L29/775 ; H01L23/525 ; H01L29/40
Abstract:
A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
Public/Granted literature
- US20150279846A1 ANTIFUSE ARRAY AND METHOD OF FORMING ANTIFUSE USING ANODIC OXIDATION Public/Granted day:2015-10-01
Information query
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