Invention Grant
- Patent Title: Semiconductor device comprising oxide semiconductor layer
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Application No.: US14883706Application Date: 2015-10-15
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Publication No.: US09954005B2Publication Date: 2018-04-24
- Inventor: Hajime Kimura , Hiroki Ohara , Masayo Kayama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-184323 20090807
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L29/45 ; H01L29/49 ; H01L29/786 ; H01L29/66
Abstract:
A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor.
Public/Granted literature
- US20160035758A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-02-04
Information query
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