- Patent Title: Semiconductor device structure useful for bulk transistor and method of manufacturing same where a substrate extends commonly over a transistor, an element region, and a separation region
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Application No.: US15186765Application Date: 2016-06-20
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Publication No.: US09954031B2Publication Date: 2018-04-24
- Inventor: Takashi Yokoyama , Taku Umebayashi
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2013-181338 20130902
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L23/48 ; H01L29/78 ; H01L21/768 ; H01L27/06 ; H01L21/84 ; H01L27/12 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12
Abstract:
A semiconductor device including a semiconductor substrate with a first surface and a second surface facing each other, the semiconductor substrate having an element region in which a transistor is provided on the first surface, and a separation region in which an element separating layer surrounding the element region is provided; a contact plug extending from the first surface to the second surface, in the element region of the semiconductor substrate; and an insulating film covering a periphery of the contact plug.
Public/Granted literature
- US20160293664A1 SEMICONDUCTOR DEVICE STRUCTURE USEFUL FOR BULK TRANSISTOR AND METHOD OF MANUFACTURING SAME Public/Granted day:2016-10-06
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