- Patent Title: Method of forming a semiconductor device and semiconductor device
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Application No.: US14936279Application Date: 2015-11-09
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Publication No.: US09954065B2Publication Date: 2018-04-24
- Inventor: Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze , Ingo Muri , Iris Moder , Johannes Baumgartl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/265 ; H01L21/324 ; H01L21/304 ; H01L21/306 ; H01L21/3205 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/45 ; H01L29/739 ; H01L29/06 ; H01L29/08
Abstract:
In accordance with a method of forming a semiconductor device, an auxiliary structure is formed at a first surface of a silicon semiconductor body. A semiconductor layer is formed on the semiconductor body at the first surface. Semiconductor device elements are formed at the first surface. The semiconductor body is then removed from a second surface opposite to the first surface at least up to an edge of the auxiliary structure oriented to the second surface.
Public/Granted literature
- US20170133465A1 Method of Forming a Semiconductor Device and Semiconductor Device Public/Granted day:2017-05-11
Information query
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