Invention Grant
- Patent Title: Electronic device and manufacturing method thereof
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Application No.: US14484295Application Date: 2014-09-12
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Publication No.: US09954171B2Publication Date: 2018-04-24
- Inventor: Yu-Jung Peng , Hsin-Yu Hsieh , Yi-Kai Wang
- Applicant: Wistron Corporation
- Applicant Address: TW New Taipei
- Assignee: Wistron Corporation
- Current Assignee: Wistron Corporation
- Current Assignee Address: TW New Taipei
- Agency: JCIPRNET
- Priority: TW103112718A 20140407
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; H01L27/28

Abstract:
A manufacturing method of an electronic device includes: providing a substrate; forming a source and a drain on the substrate; forming a semiconductor layer on the substrate; forming a first light sensitive material layer on the semiconductor layer; removing a first portion of the first light sensitive material layer by a first exposure and development process and maintaining a second portion of the first light sensitive material layer to serve as a first gate insulation layer; patterning the semiconductor layer to form a channel layer below the first gate insulation layer; forming a second light sensitive material layer on the substrate; removing a third portion of the second light sensitive material layer by a second exposure and development process to expose at least a part of the first gate insulation layer; and forming a first gate on the first gate insulation layer. An electronic device is also provided.
Public/Granted literature
- US20150287924A1 ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-10-08
Information query
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