Invention Grant
- Patent Title: Semiconductor image sensor module and method of manufacturing the same
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Application No.: US14193762Application Date: 2014-02-28
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Publication No.: US09955097B2Publication Date: 2018-04-24
- Inventor: Shin Iwabuchi , Makoto Motoyoshi
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2005-163267 20050602; JP2005-197730 20050706
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/378 ; H04N5/374 ; H04N5/225 ; H01L23/48 ; H01L27/115 ; H01L29/788 ; H01L29/792

Abstract:
A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.
Public/Granted literature
- US20140175592A1 SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-06-26
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