Invention Grant
- Patent Title: Bond rings in semiconductor devices and methods of forming same
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Application No.: US15080356Application Date: 2016-03-24
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Publication No.: US09957156B2Publication Date: 2018-05-01
- Inventor: Chih-Ming Chen , Ping-Yin Liu , Chung-Yi Yu , Yeur-Luen Tu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81B7/00 ; B81C1/00 ; H01L23/00

Abstract:
An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.
Public/Granted literature
- US20170275153A1 BOND RINGS IN SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME Public/Granted day:2017-09-28
Information query
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