A new approach to fabricating regularly patterned nano-scale structures, by self assembly of the structures is disclosed, where a pattern of nano-lines are deposited on a substrate and nano-structures are grown by self assembly in regions between the lines to form regular or patterned nano-scale structures, which are ideally suited for the construction nano-scale materials, nano-scale electronic devices and other nano-scale objects, apparatuses or devices. The invention also relates to methods of making and using same.