Invention Grant
- Patent Title: Highly conducting graphitic films from graphene liquid crystals
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Application No.: US15192241Application Date: 2016-06-24
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Publication No.: US09957164B2Publication Date: 2018-05-01
- Inventor: Aruna Zhamu , Bor Z. Jang
- Applicant: Nanotek Instruments, Inc.
- Applicant Address: US OH Dayton
- Assignee: Nanotek Instruments, Inc.
- Current Assignee: Nanotek Instruments, Inc.
- Current Assignee Address: US OH Dayton
- Main IPC: C01B32/20
- IPC: C01B32/20 ; C01B31/04 ; C09K5/14 ; H01B1/04 ; H01B1/24

Abstract:
A process for producing a highly oriented graphitic film, consisting of (a) preparing a dispersion having graphene oxide (GO) or chemically functionalized graphene (CFG) dispersed in a liquid to form a liquid crystal phase (but not in a GO gel state); (b) depositing the dispersion onto a supporting substrate to form a layer of GO or CFG under an orientation-inducing stress; (c) removing the liquid to form a dried GO or CFG layer having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) thermally reducing the dried layer at a first temperature higher than 100° C. to produce a porous layer of reduced GO or CFG; (e) further heat-treating the porous layer at a second temperature to produce a porous graphitic film having an inter-plane spacing d002 less than 0.4 nm; and (f) compressing the porous graphitic film to produce the highly oriented graphitic film.
Public/Granted literature
- US20160304351A1 Highly conducting graphitic films from graphene liquid crystals Public/Granted day:2016-10-20
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