Invention Grant
- Patent Title: Precursors suitable for high temperature atomic layer deposition of silicon-containing films
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Application No.: US15797535Application Date: 2017-10-30
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Publication No.: US09957165B2Publication Date: 2018-05-01
- Inventor: Mark Saly
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C01B33/12
Abstract:
Provided are methods of depositing silicon-containing films utilizing certain precursors at temperatures of 400° C. or higher. Certain methods comprise exposing a substrate surface to a silicon precursor and another precursor to achieve various films. Examples of silicon-containing films which can be deposited include SiN, SiC, SiO2, SiCN, etc.
Public/Granted literature
- US20180057362A1 Precursors Suitable For High Temperature Atomic Layer Deposition Of Silicon-Containing Films Public/Granted day:2018-03-01
Information query
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