Invention Grant
- Patent Title: Underfill material and method for manufacturing semiconductor device using the same
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Application No.: US14915734Application Date: 2014-09-10
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Publication No.: US09957411B2Publication Date: 2018-05-01
- Inventor: Takayuki Saito , Taichi Koyama , Hironobu Moriyama
- Applicant: DEXERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DEXERIALS CORPORATION
- Current Assignee: DEXERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-188683 20130911
- International Application: PCT/JP2014/073964 WO 20140910
- International Announcement: WO2015/037633 WO 20150319
- Main IPC: C09J7/00
- IPC: C09J7/00 ; C09J163/00 ; C09J133/08 ; C09J133/10 ; C09D163/00 ; C09J133/04 ; C09J163/08 ; H01L21/683 ; H01L23/29 ; H01L21/56 ; C09D133/06 ; C09J133/06 ; H01L23/31 ; C08G59/42 ; H01L23/00 ; H01L25/065 ; H01L25/00

Abstract:
An underfill material achieving a wide margin for mounting and a method for manufacturing a semiconductor device using the same are provided. The underfill material contains an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, wherein a minimum melt viscosity attainment temperature and a minimum melt viscosity obtained when melt viscosity of the underfill material is measured under a temperature increase rate condition in a range of 5 to 50° C./min are in a range of 100° C. to 150° C. and in a range of 100 to 5000 Pa·s, respectively. Since variation in the minimum melt viscosity attainment temperature measured under different temperature increase conditions is small, voidless mounting and good solder bonding properties can be achieved without strict control on the temperature profile during thermocompression bonding, and a wide margin for mounting can be achieved.
Public/Granted literature
- US20160194517A1 Underfill Material and Method for Manufacturing Semiconductor Device Using the Same Public/Granted day:2016-07-07
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