Invention Grant
- Patent Title: Substrate processing apparatus and heating unit
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Application No.: US15051740Application Date: 2016-02-24
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Publication No.: US09957616B2Publication Date: 2018-05-01
- Inventor: Hitoshi Murata , Yuichi Wada , Takashi Yahata , Hidenari Yoshida , Shuhei Saido
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2015-035845 20150225; JP2015-253777 20151225
- Main IPC: C23C16/46
- IPC: C23C16/46 ; C23C16/52 ; H05B3/44 ; H05B1/02 ; H01L21/67 ; H05B3/00

Abstract:
The present invention is directed providing a technique capable of reducing a time for stabilizing a temperature in a processing chamber. The technique includes: a substrate support configured to support a substrate; a thermal insulation unit disposed below the substrate support; a processing chamber configured to accommodate the substrate support and where the substrate is processed; a first heating unit disposed around the processing chamber and configured to heat an inside of the processing chamber from a lateral side thereof; and a second heating unit disposed between the substrate support and the thermal insulation unit inside the processing chamber, the second heating unit including a heater having a substantially annular shape and a suspending member extending downward from the heater, wherein a diameter of the heater is smaller than that of the substrate.
Public/Granted literature
- US20160244878A1 SUBSTRATE PROCESSING APPARATUS AND HEATING UNIT Public/Granted day:2016-08-25
Information query
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