Invention Grant
- Patent Title: Method of producing epitaxial wafer
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Application No.: US14896981Application Date: 2014-05-13
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Publication No.: US09957637B2Publication Date: 2018-05-01
- Inventor: Akira Fukui
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2013-121845 20130610
- International Application: PCT/JP2014/002513 WO 20140513
- International Announcement: WO2014/199560 WO 20141218
- Main IPC: C30B25/02
- IPC: C30B25/02 ; C30B25/16 ; C23C16/52 ; C30B29/06 ; C30B33/00 ; H01L21/306 ; H01L21/66 ; H01L21/02
Abstract:
A method of adjusting conditions for epitaxial growth includes a first measurement step for measuring the thickness profile of a wafer before forming an epitaxial film; a second measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of the epitaxial film after an epitaxial growth step before a polishing step; a third measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of an epitaxial film; and a step for adjusting conditions for epitaxial growth using the thickness profiles and the film thickness profiles measured in the first, second, and third measurement steps.
Public/Granted literature
- US20160122904A1 METHOD OF PRODUCING EPITAXIAL WAFER Public/Granted day:2016-05-05
Information query
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