A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.