Invention Grant
- Patent Title: MEMS inertial sensor and forming method therefor
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Application No.: US14004838Application Date: 2012-02-23
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Publication No.: US09958471B2Publication Date: 2018-05-01
- Inventor: Lianjun Liu
- Applicant: Lianjun Liu
- Applicant Address: CN Nankai District Tianjin
- Assignee: MEMSEN ELECTRONICS INC
- Current Assignee: MEMSEN ELECTRONICS INC
- Current Assignee Address: CN Nankai District Tianjin
- Agency: Cantor Colburn LLP
- Priority: CN201110061571 20110315
- International Application: PCT/CN2012/071495 WO 20120223
- International Announcement: WO2012/122879 WO 20120920
- Main IPC: G01P15/125
- IPC: G01P15/125 ; B81C1/00 ; G01P15/18 ; G01C19/5769 ; G01P15/08

Abstract:
A MEMS inertial sensor, may include a movable sensitive element; and second substrate and a third substrate. The movable sensitive element may be formed by using a first substrate which may be formed of a monocrystalline semiconductor material. The first substrate may include a first surface and a second surface which are opposite to each other. One or more conductive layers may be formed on the first surface of the first substrate The second substrate may be coupled to a surface of the one or more conductive layer on the first substrate. The third substrate may be coupled to the second surface of the first substrate. The third substrate and the second substrate are respectively arranged on two opposite sides of the movable sensitive element.
Public/Granted literature
- US20130340526A1 MEMS INERTIAL SENSOR AND FORMING METHOD THEREFOR Public/Granted day:2013-12-26
Information query
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