Invention Grant
- Patent Title: Passive optical diode on semiconductor substrate
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Application No.: US15627335Application Date: 2017-06-19
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Publication No.: US09958608B2Publication Date: 2018-05-01
- Inventor: Minghao Qi , Li Fan , Jian Wang , Leo Tom Varghese
- Applicant: Purdue Research Foundation
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Agency: Maginot, Moore & Beck LLP
- Main IPC: G02F1/225
- IPC: G02F1/225 ; G02B6/122 ; G02B6/12 ; G02B6/27 ; G02B6/293

Abstract:
A method of fabricating an optical device includes forming on a semiconductor substrate a first optical cavity, a second optical cavity, a first light guide and a second light guide. The first light guide has an input, and is optically coupled to the first optical cavity by a first coupling strength. In addition, the first light guide is optically coupled to the second optical cavity by a second coupling strength. The second light guide has an output, and is coupled to the second optical cavity by a third coupling strength. The first coupling strength is greater than the second coupling strength, and the third coupling strength is greater than the second coupling strength.
Public/Granted literature
- US20170285262A1 Passive Optical Diode on Semiconductor Substrate Public/Granted day:2017-10-05
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