Invention Grant
- Patent Title: Error correction for non-volatile memory
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Application No.: US15463395Application Date: 2017-03-20
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Publication No.: US09959166B2Publication Date: 2018-05-01
- Inventor: Robert Mateescu , Zvonimir Z. Bandic , Yongjune Kim , Seung-Hwan Song
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA Irvine
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA Irvine
- Agency: Patterson + Sheridan, LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; H03M13/29 ; H03M13/00 ; G11C29/08 ; G11C29/00

Abstract:
Techniques for encoding data for non-volatile memory storage systems are disclosed. In one particular embodiment, the techniques may be realized as a method including determining whether the memory includes a defective memory cell, receiving a message to be written to the memory, sub-dividing the message into a plurality of sub-messages, generating a first error correction code for the sub-messages, the first error correction code being a first type, generating a plurality of second error correction codes for the sub-messages, the second error correction codes being a second type different from the first type, generating a combined message comprising the sub-messages, the first error correction code, and the plurality of second error correction codes, and writing the combined message to the memory, at least a portion of the combined message being written to the defective memory cell.
Public/Granted literature
- US20170192846A1 ERROR CORRECTION FOR NON-VOLATILE MEMORY Public/Granted day:2017-07-06
Information query