Invention Grant
- Patent Title: Offset-printing method for three-dimensional printed memory
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Application No.: US15371235Application Date: 2016-12-07
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Publication No.: US09959910B2Publication Date: 2018-05-01
- Inventor: Guobiao Zhang
- Applicant: HangZhou HaiCun Information Technology Co., Ltd.
- Applicant Address: CN HangZhou, ZheJiang US OR Corvallis
- Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, ZheJiang US OR Corvallis
- Priority: CN201610925942 20161024
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C17/00 ; H01L27/102 ; G11C17/16 ; H01L27/112 ; G11C17/06 ; G11C17/18 ; H01L21/822 ; H01L21/8229 ; G11C11/56 ; G11C8/06 ; H01L25/065
Abstract:
The present invention discloses an offset-printing method for a three-dimensional printed memory. The mask-patterns for different memory levels are merged onto a multi-region data-mask. At different printing steps, a wafer is offset by different values with respect to the data-mask. Accordingly, data-patterns from a same data-mask are printed into different memory levels.
Public/Granted literature
- US20170084621A1 Offset-Printing Method for Three-Dimensional Printed Memory Public/Granted day:2017-03-23
Information query
