Invention Grant
- Patent Title: Memory system including non-volatile memory of which access speed is electrically controlled
-
Application No.: US15067723Application Date: 2016-03-11
-
Publication No.: US09959919B2Publication Date: 2018-05-01
- Inventor: Daisuke Saida , Susumu Takeda , Hiroki Noguchi , Kazuhiko Abe
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-058745 20150320
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/12 ; G11C11/16 ; G11C29/02 ; G11C11/18 ; G06F12/0811
Abstract:
A memory system has a non-volatile memory of which access speed is electrically controlled, a control circuitry that selects a first region which is a portion of a memory region of the non-volatile memory, and a boost circuit that adjusts an access speed of the first region to be higher than an access speed of a second region different from the first region in the memory region.
Public/Granted literature
- US20160276008A1 MEMORY SYSTEM Public/Granted day:2016-09-22
Information query
