Invention Grant
- Patent Title: Plasma processing method
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Application No.: US15464503Application Date: 2017-03-21
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Publication No.: US09960016B2Publication Date: 2018-05-01
- Inventor: Kumiko Ono , Hiroshi Tsujimoto , Koichi Nagami
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2016-057010 20160322
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01J37/32

Abstract:
In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.
Public/Granted literature
- US20170278675A1 PLASMA PROCESSING METHOD Public/Granted day:2017-09-28
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