Invention Grant
- Patent Title: Substrate cleaning method, substrate cleaning apparatus and vacuum processing system
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Application No.: US14430760Application Date: 2013-08-28
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Publication No.: US09960056B2Publication Date: 2018-05-01
- Inventor: Kazuya Dobashi , Kensuke Inai , Misako Saito
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2012-217539 20120928
- International Application: PCT/JP2013/005079 WO 20130828
- International Announcement: WO2014/049959 WO 20140403
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02 ; B08B5/02 ; B08B13/00
Abstract:
In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified.
Public/Granted literature
- US20150255316A1 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND VACUUM PROCESSING SYSTEM Public/Granted day:2015-09-10
Information query
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