Invention Grant
- Patent Title: Substrate processing apparatus for managing transfer state of substrate gas storage container based on supply flow rate
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Application No.: US14318333Application Date: 2014-06-27
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Publication No.: US09960065B2Publication Date: 2018-05-01
- Inventor: Junichi Kawasaki , Mitsuru Funakura
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2013-136197 20130628; JP2014-108161 20140526
- Main IPC: H01L21/673
- IPC: H01L21/673 ; H01L21/67 ; B05C11/10 ; H01L21/677

Abstract:
Provided are a substrate processing apparatus, a method of manufacturing a semiconductor device, and a non-transitory computer-readable recording medium, which are capable of reducing an effect on a substrate, which is caused by a change in an atmosphere in a substrate storage container, by appropriately supplying an inert gas into the substrate storage container. The substrate processing apparatus includes a purge mechanism installed in at least one of a support unit and a receiving unit accommodating a substrate storage container, and configured to supply an inert gas into the substrate storage container; a monitoring unit configured to compare a flow rate of the predetermined gas supplied into the substrate storage container via the purge mechanism with a preset reference value and output a signal indicating a result of comparison between the flow rate of the predetermined gas and the preset reference value; and a management unit configured to manage use of the substrate storage container, based on the signal outputted from the monitoring unit.
Public/Granted literature
Information query
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