Invention Grant
- Patent Title: Systems and methods for thermal conduction using S-contacts
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Application No.: US15194114Application Date: 2016-06-27
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Publication No.: US09960098B2Publication Date: 2018-05-01
- Inventor: Chris Olson
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jaquez, Esq.; Bruce W. Greenhaus, Esq.
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L27/12 ; H01L21/84 ; H01L21/48

Abstract:
An integrated circuit architecture that provides a path having relatively low thermal resistance between one or more electronic devices and one or more thermal structures formed on an insulator layer on a substrate. Independent parallel thermal conduction paths are provided through the insulator layer, such as a buried oxide (“BOX”) layer, to allow heat to flow from the substrate layer to a thermal structure disposed upon the BOX layer. In some cases, the substrate is a silicon substrate layer supporting the thermal structure and a heat source, such as an electronic device (e.g., power amplifier, transistor, diode, resistor, etc.).
Public/Granted literature
- US20170372984A1 Systems and Methods for Thermal Conduction Using S-Contacts Public/Granted day:2017-12-28
Information query
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