Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US12563608Application Date: 2009-09-21
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Publication No.: US09960116B2Publication Date: 2018-05-01
- Inventor: Kazuaki Ohshima
- Applicant: Kazuaki Ohshima
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-245124 20080925
- Main IPC: H01L29/86
- IPC: H01L29/86 ; H01L23/522 ; H01C1/16 ; H01C13/02 ; H01L23/525 ; H01L49/02

Abstract:
A resistor whose characteristic value can be changed without requiring a photolithography process again is provided. The resistor includes a plurality of first resistor units which is connected serially to each other and a second resistor unit which is connected in parallel to part of the first resistor units. Then, after the measurement of a semiconductor integrated circuit, the second resistor unit is electrically disconnected as necessary. The first resistor units may be either a unit including a single resistor or may be a unit including a plurality of resistors.
Public/Granted literature
- US20100072574A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2010-03-25
Information query
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