Invention Grant
- Patent Title: Semiconductor device and bump formation process
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Application No.: US15269212Application Date: 2016-09-19
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Publication No.: US09960134B2Publication Date: 2018-05-01
- Inventor: Yi-Li Hsiao , Chen-Hua Yu , Shin-Puu Jeng , Chih-Hang Tung , Cheng-Chang Wei
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768 ; H01L23/498 ; H01L21/44 ; H01L23/52
Abstract:
A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.
Public/Granted literature
- US20170005051A1 Semiconductor Device And Bump Formation Process Public/Granted day:2017-01-05
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