Invention Grant
- Patent Title: Hybrid bonding with air-gap structure
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Application No.: US15071576Application Date: 2016-03-16
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Publication No.: US09960142B2Publication Date: 2018-05-01
- Inventor: Szu-Ying Chen , Dun-Nian Yaung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/3063
- IPC: H01L21/3063 ; H01L23/00 ; H01L23/498 ; H01L23/522 ; H01L21/308 ; H01L21/764 ; H01L25/00 ; H01L25/065 ; H01L23/532
Abstract:
A package component includes a surface dielectric layer having a first planar surface, and a metal pad in the surface dielectric layer. The metal pad includes a diffusion barrier layer that includes sidewall portions, and a metallic material encircled by the sidewall portions of the diffusion barrier layer. The metallic material has a second planar surface level with the first planar surface. An air gap extends from the second planar surface of the metallic material into the metallic material. An edge of the air gap is aligned to an edge of the metallic material.
Public/Granted literature
- US20160197049A1 Hybrid Bonding with Air-Gap Structure Public/Granted day:2016-07-07
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