An optoelectronic device is provided, including light-emitting diodes arranged such that: N diodes of said plurality, where N ≥2, are connected in series and are configured to be forward-biased, and at least one diode is connected in parallel to the N diodes and is configured to be reverse-biased and to form a Zener diode, wherein a sum of threshold voltages of the N diodes is less than a breakdown voltage of the Zener diode, and the light-emitting diodes include a stack of semiconductive portions including a first conductivity-type doped portion, a second conductivity-type doped portion opposite the first type, and a first intermediate portion doped according to the first type and being disposed between said first and second portions and having a doping level such that the breakdown voltage is greater than the sum of the threshold voltages of each of the N diodes.