Invention Grant
- Patent Title: Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits
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Application No.: US14884388Application Date: 2015-10-15
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Publication No.: US09960157B2Publication Date: 2018-05-01
- Inventor: Gerhard Prechtl , Bernhard Zojer
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee Address: AT Villach
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8258 ; H01L29/423 ; H01L29/778 ; H01L27/088 ; H01L27/085 ; H01L29/08 ; H01L29/20

Abstract:
Circuits and devices for bidirectional normally-off switches are described. A circuit for a bidirectional normally-off switch includes a depletion mode transistor and an enhancement mode transistor. The depletion mode transistor includes a first source/drain node, a second source/drain node, a first gate, and a second gate. The enhancement mode transistor includes a third source/drain node and a fourth source/drain node, and a third gate. The third source/drain node is coupled to the first source/drain node.
Public/Granted literature
- US20170110448A1 Bidirectional Normally-Off Devices and Circuits Public/Granted day:2017-04-20
Information query
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