Invention Grant
- Patent Title: Monolithic bi-directional current conducting device and method of making the same
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Application No.: US15015564Application Date: 2016-02-04
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Publication No.: US09960159B2Publication Date: 2018-05-01
- Inventor: John V. Veliadis
- Applicant: John V. Veliadis
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Tarolli, Sundheim, Covell & Tummino LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; G06F9/44 ; H01L21/8234 ; H01L29/06 ; H01L29/66 ; H01L29/808
Abstract:
A monolithic bi-directional device provides bi-directional power flow and bi-directional blocking of high-voltages. The device includes a first transistor having a first drain formed over a first channel layer that overlays a substrate, and a second transistor that includes a second drain formed over a second channel layer that overlays the substrate. The substrate forms a common source for both the first transistor and the second transistor.
Public/Granted literature
- US20160155738A1 MONOLITHIC BI-DIRECTIONAL CURRENT CONDUCTING DEVICE AND METHOD OF MAKING THE SAME Public/Granted day:2016-06-02
Information query
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