Invention Grant
- Patent Title: Semiconductor devices including charge storage patterns
-
Application No.: US15245540Application Date: 2016-08-24
-
Publication No.: US09960171B2Publication Date: 2018-05-01
- Inventor: Kohji Kanamori , Shinhwan Kang , Youngwoo Park , Junghoon Park
- Applicant: Kohji Kanamori , Shinhwan Kang , Youngwoo Park , Junghoon Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0153269 20151102
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L27/11519 ; H01L27/11565 ; H01L27/11556 ; H01L27/11582 ; H01L27/11524 ; H01L27/1157
Abstract:
Semiconductor devices are provided. A semiconductor device includes a plurality of gate electrodes. The semiconductor device includes a channel structure adjacent the plurality of gate electrodes. The semiconductor device includes a plurality of charge storage segments between the channel structure and the plurality of gate electrodes. Methods of forming semiconductor devices are also provided.
Public/Granted literature
- US20170125428A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2017-05-04
Information query
IPC分类:
